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| Product Bulletin OP755 June 1999 NPN Phototransistor with Base-Emitter Resistor Types OP755A, OP755B, OP755C, OP755D Features * Wide receiving angle * Variety of sensitivity ranges * Side-looking package for space limited * Base-emitter resistor provides ambient light protection applications Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Collec tor DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40* C to +100* C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260* C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2) O-ae (1) RMA flux is recommended. Duration can be extended to 10 sec. max. When flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 2.0 mW/* C above 25* C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 * A. Description The OP755 device consists of a NPN silicon phototransistor molded in blue tinted epoxy packages. The wide receiving angle provides relatively even reception over a large area. The sidelooking package is designed for easy PC board mounting of slotted optical switches or optical interrupt detectors. The series is mechanically and spectrally matched to the OP140 and OP240 series of infrared emitting diodes. The phototransistor has an internal baseemitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semitransparent to infrared light in interruptive applications. Typical Performance Curves I*1/2 I1/2(R) I-- Schematic E o Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 9 (972) 323-2200 Fax (972) 323-2396 Types OP755A, OP755B, OP755C, OP755D Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL I C(ON) PARAMETER On-State Collector Current OP755A OP755B OP755C OP755D Knee Point Irradiance Collector-Emitter Dark Current Emitter-Reverse Current Collector-Emitter Breakdown Collector-Emitter Saturation Voltage MIN TYP MAX UNITS 1.80 1.20 0.70 0.70 .2 100 100 30 0.4 5.50 3.40 2.25 5.50 TEST CONDITIONS VCE = 5 V, Ee = 1.0 mW/cm2(3) mA EKP ICEO IECO V(BR)CEO VCE(SAT) mW/cm2 VCE = 5 V(4) nA *A V V VCE = 10 V, Ee = 0 EYU a oi E IC = 100 * A IC = 100 * A, Ee = 1 mW/cm2(3) Typical Performance Curves O(R)*|1/4 Y1/2(R) Y(R)(R) -o (R) U*-1/2 O(R)|*1/4 O* 1/4 U(R) Y(R)(R) -o 3/4* I(R)(R) i i i Neee O* Y(R)(R) U(R) Y(R)(R) oi Neee oi oi oi oi oi i i oi oi EYU a e E NoI Y1/2(R) Y(R)(R) -o x(R)(R)1/4*1/2 * o (R) U*-1/2 o Uo I o 3/4* I(R)(R) o **Y U o x(R)(R)1/4*1/2 o En1/2i O(R)*|1/4 N -o U(R)1/2 io VRL = 1 V VCE = 5 V 50% Duty Cycle LED: * = 935 nm I*1/2 I*- 1/4 U I* -o O1/4 I-*-1/2 ii ie c ee EYY a e E EIO a i E a i O| E a iI I(c)*1/2* I* I- Y*(R)1/2* oe e ie IO a IO a iO* i ie i i i i i OUU a Ux-o * a ec EIO *- 1/2(R)-- I O i e e i o U(R)1/2 o OO| IO a O1/4 I-*-1/2 o O* I- Y1/4**-ae O* -(R)1/2 *- -1/4 OUU (c)* (R) 1/4 * e -o x U *- 1/4-1/4 (R) ENEI a i Eo Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 10 |
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